| PART |
Description |
Maker |
| 5KP45APT |
VOLTAGE-5.0 TO 110 VOLTS 5000 WATTS PEAK POWER 8.0 WATTS STEADY STATE
|
Chenmko Enterprise Co. Ltd.
|
| RFP-10-100RV |
Flanged Resistors 10 Watts, 100Ω
Flanged Resistors 10 Watts, 100ヘ
|
Anaren Microwave
|
| PTB20078 |
2.5 Watts, 1525660 MHz INMARSAT RF Power Transistor
2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor 2.5瓦，16250年国际海事卫星组织兆赫射频功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| 2729-170 |
170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100渭s, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100刁, 10% Radar 2700-2900 MHz
|
MICROSEMI[Microsemi Corporation]
|
| PTB20038 |
25 Watts, 86000 MHz Cellular Radio RF Power Transistor
25 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| AVO50C-48S3V3-6L AVO50-48S2V5P-4 AVO50-48S05-4 AVO |
POWER 50 Watts
Low ripple and noise
POWER 50 Watts
|
Artesyn Technologies
|
| PTB20145 |
9 Watts, 91560 MHz Cellular Radio RF Power Transistor
9 Watts, 915-960 MHz Cellular Radio RF Power Transistor 9瓦，915-960兆赫蜂窝无线电射频功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管
12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| MJ10009 MJ10009_D ON1969 |
From old datasheet system
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| PTB20008 |
10 Watts, 93560 MHz Cellular Radio RF Power Transistor
10 Watts, 935-960 MHz Cellular Radio RF Power Transistor
10 Watts 935-960 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
