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EVG31-050 - TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 30A I(C) 5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 100A I(C)

EVG31-050_1430503.PDF Datasheet

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EVG31-050 2DI75D050 ET127-520V

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FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 500MA I(C) \| SO TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\| npn型\| 150伏五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| SO 晶体管\|晶体管\|进步党\| 100V的五（巴西）总裁\|甲一（c）\| TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| SOT-89 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 1A条一（c）\|采用SOT - 89 TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\|叩\| 45V的五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 400MA I(C) \| SO 晶体管\|晶体管\|叩\| 30V的五（巴西）总裁\| 400mA的一（c）\| TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| SOT-89	Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
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