| PART |
Description |
Maker |
| DS1220Y-150-IND DS1220Y-200-IND DS1220Y-100-IND DS |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1330ABL-70-IND DS1330ABL-100-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1745Y-150-IND DS1745YLPM-150-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1275 DS1270Y-70-IND DS1270Y-100-IND DS1270AB-70- |
NVRAM (Battery Based) NVRAM中（基于电池
IC,LINE TRANSCEIVER,CMOS,1 DRIVER,1 RCVR,DIP,8PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| M40Z30005 M40Z300MH6TR M40Z300MQ6TR M40Z300WMH6TR |
NVRAM CONTROLLER FOR UP TO EIGHT LPSRAM
5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs 5VV NVRAM中监多达8LPSRAMs
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M40Z111 M40Z111MH6 M40Z111MH6TR M40Z111WMH6 M40Z11 |
NVRAM CONTROLLER FOR UP TO TWO LPSRAM
5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| M41ST87W11 M41ST87WSS6F |
Serial real-time clock (RTC) supervisor
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
ST Microelectronics
STMicroelectronics
|
| GN01100B |
GaAs IC (with built-in ferroelectric)
|
Panasonic Semiconductor
|
| FM24C512 FM24C512-G |
512Kb FRAM Serial Memory
512Kbit Ferroelectric Nonvolatile RAM
|
Ramtron International Corporation
Ramtron Corporation
|
| MB85R256G |
256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies
|
http://
|
