PART |
Description |
Maker |
HYS64D64020GBDL-5-C |
128MB-1GB, 200pin Small outlines for Laptop
|
Infineon
|
HYS64D64020GDL-5-B HYS64D64020GDL-6-B |
128MB-1GB, 200pin Small outlines for Laptop
|
Infineon
|
K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYB39S128400CT-7 HYB39S128160CT-7 HYB39S128800CT-7 |
128Mbit Synchronous DRAMs SDRAM Components - 128Mb (16Mx8) PC133 3-3-3 SDRAM Components - 128Mb (8Mx16) PC133 3-3-3 SDRAM Components - 128Mb (32Mx4) PC133 3-3-3 128-MBit Synchronous DRAM
|
Infineon
|
KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2 From old datasheet system 1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
ADECB1608 |
DDR SDRAM 200pin DIMM
|
A-Data Technology
|
TS1GJF2A |
1GB USB2.0 JetFlash垄莽2A 1GB USB2.0 JetFlash?2A
|
Transcend Information. Inc. Transcend Information. ...
|
TS1GJF150 |
1GB USB2.0 JetFlash垄芒 1GB USB2.0 JetFlash?
|
Transcend Information. Inc. Transcend Information. ...
|
HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283 |
1GB PC133 (2-2-2) 2-bank available 2Q02 512MB PC133 (3-3-3) 1-bank POT 100 OHM 3/8 SQ CERM SL ST 2GB PC133 (3-3-3) 2-bank available 4Q02 256MB PC133 (3-3-3) 1-bank End-of-Life 512MB PC100 (2-2-2) 1-bank End-of-Life 1GB PC133 (3-3-3) 2-bank End-of-Life 2GB PC133 (2-2-2) 2-bank available 4Q02 PC133 Registered SDRAM-Modules PC133的SDRAM的注册模 1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的(3-3-3银行提供待定 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Infineon Technologies AG Infineon Technologies A...
|
HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
HYMP112S64M8-C4 HYMP564S646-E3 HYMP532S64P6-E3 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 64M X 64 DDR DRAM MODULE, 0.6 ns, ZMA200
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
EM48AM1644VBB-6FE EM48AM1644VBB-75FE EM48AM1644VBB |
128Mb (2M×4Bank×16) Synchronous DRAM 128Mb (2M隆驴4Bank隆驴16) Synchronous DRAM 128Mb (2M】4Bank】16) Synchronous DRAM
|
http:// Eorex Corporation
|