| PART |
Description |
Maker |
| K9F1208U0M-YIB0 K9F1208U0M-YCB0 DSK9F1208U0M |
64M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G0 |
-2M x 8 Bit NAND Flash Memory
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K1208U0A-VCIB0 |
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Electronic
|
| K9K1208U0C K9K1208Q0C K9K1216D0C K9K1216Q0C K9K121 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K5P6480YCM-T085 |
64M Bit (8Mx8) Nand Flash Memory / Data Sheet
|
Samsung Electronic
|
| K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16 |
64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F1G08Q0A K9F1G08U0A K9F1G08Q0M |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
3.3V Differential Transceiver 8-PDIP -40 to 85
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
COILTRONICS RoHS Compliant: Yes 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory
512K x 8 bit NAND Flash Memory
|
Samsung semiconductor
Samsung Electronic
|
| K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A- |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
512K x 8 bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MBM29LV651UE12TR MBM29LV650UE12TR MBM29LV650UE-12 |
FLASH MEMORY 64M (4M x 16) BIT
|
Fujitsu Microelectronics
|
