PART |
Description |
Maker |
NX5311GH NX5311GK NX5311 |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
|
CEL[California Eastern Labs]
|
NX5302SH NX5302SJ NX5302SK NX5302EK NX5302 NX5302E |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
|
CEL[California Eastern Labs]
|
NX5310 NX5310EH-AZ NX5310EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
|
California Eastern Laboratories
|
NX5307 NX5307EH-AZ NX5307EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION 邻舍1310纳米InGaAsP多量子阱中的FP激光可以为2.5 GB的包装二极管/ s的内部办公应
|
California Eastern Laboratories, Inc.
|
NX7361JB-BC-AZ NX7361JB-BC |
NECs 1310 nm InGaAsP MQW FP PULSD LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN)
|
CEL[California Eastern Labs]
|
NX7328BF-AA |
NECs 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (70mW MIN)
|
http:// California Eastern Laboratories
|
NX5312 NX5312EH-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS 邻舍1310纳米InGaAsP多量子阱FP激光二极管可以55 MB的包秒,622 Mb /秒,1.25 Gb / s的应
|
California Eastern Laboratories, Inc.
|
NX8510UD NX8510UD-AZ |
NECs InGaAsP MQW-DFB TOSA FOR 2.5 Gb/s CWDM APPLICATIONS
|
California Eastern Laboratories
|
NX6508-AZ NX6508 |
NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
|
CEL[California Eastern Labs]
|
NX6406GK-AZ NX6406 NX6406GH-AZ |
NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
CEL[California Eastern Labs]
|
NX8503CG-CC NX8503BG-CC NX8503CG NX8503BG |
TVS BIDIRECT 1500W 14V SMC NECs 1550 nm InGaAsP MQW DFB LASER DIODE
|
NEC Corp. NEC[NEC] http://
|
NX7528BF-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (60 mW MIN)
|
California Eastern Laboratories http://
|