| PART |
Description |
Maker |
| MSM51V16165A |
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DRAM / FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
| MSM51V16160F |
DRAM / FAST PAGE MODE TYPE
1,048,576-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| MSM51V17100 |
16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DRAM / FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
| MSM51V16400A |
DRAM / FAST PAGE MODE TYPE
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| MSM5116160F MSM5116160F-50JS MSM5116160F-60JS MSM5 |
1M X 16 FAST PAGE DRAM, 60 ns, PDSO44
1M X 16 FAST PAGE DRAM, 70 ns, PDSO42
1,048,576-Word 】 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
1,048,576-Word × 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI ELECTRIC INDUSTRY CO LTD
OKI electronic componets
|
| MSC23V26418TD-XXBS8 MSC23V26418TD MSC23V26418TD-60 |
2M X 64 FAST PAGE DRAM MODULE, 60 ns, DMA168
From old datasheet system
2,097,152-Word x 64-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
|
OKI ELECTRIC INDUSTRY CO LTD
|
| AS4C4M4F0-50JC AS4C4M4F0-50JI AS4C4M4F0-50TC AS4C4 |
x4 Fast Page Mode DRAM
5V 4M x 4 CMOS DRAM (Fast Page mode) 5V米4的CMOS的DRAM（快速页模式
|
Alliance Semiconductor, Corp.
|
| IS41LV16257B-35K IS41LV16257B-35T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
Integrated Silicon Solution, Inc.
|
| K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B- |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
| IS41LV85125 IS41C85125-60KI IS41C85125-35K IS41C85 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 512K X 8 FAST PAGE DRAM, 60 ns, PDSO28
512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 512K X 8 FAST PAGE DRAM, 35 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
