| PART |
Description |
Maker |
| DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode
Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
| 2SC2790 |
SILICON NPN TRIPLE DIFFUSED TYPE
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATION
|
Toshiba Semiconductor
|
| BAS20 BAS19 BAS21 Q62702-A95 Q62702-A113 Q62702-A7 |
Silicon Switching Diodes (High-speed/ high-voltage switch)
From old datasheet system
SILICON SWITCHING DIODES (HIGH-SPEED, HIGH-VOLTAGE SWITCH)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2SK2348 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
High-Voltage/ High-Speed Switching Applications
|
Sanyo Semicon Device
|
| 2SK2037 E001426 SK2037 |
N CHANNEL TYPE (HIGH SPEED/ ANALOG SWITCHING APPLICATIONS)
HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS
TOSHIBA FIELD EFFECT TRANSISTOR SILICON CHANNEL TYPE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| HSU226 |
Diodes>Switching
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
| SMBD7000 MMBD7000 SMBD7000/MMBD7000 |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
| 2SC3148 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
| H7N1004FM |
Silicon N-Channel MOS FET HigH-Speed Power Switching
Transistors>Switching/MOSFETs
|
Renesas Electronics Corporation
|
| H5N2515P-E H5N2515P |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
