| PART |
Description |
Maker |
| AT45DB041B-SC-2.5 AT45DB041B-TC-2.5 AT45DB041B-TI |
MOSFET N-CH 200V 105A ISOPLUS247
4-megabit 2.5-volt Only or 2.7-volt Only DataFlash 4M X 1 FLASH 2.7V PROM, PDSO28
4-megabit 2.5-volt Only or 2.7-volt Only DataFlash 4M X 1 FLASH 2.7V PROM, PDSO8
|
Atmel Corp.
ATMEL Corporation
Atmel, Corp.
|
| AT49BV001A AT49BV001A-55JI AT49BV001A-55TI AT49BV0 |
128K x 8 (1M bit), 2.7-Volt Read and Write, Top or Bottom Boot Parametric Block Flash.
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage⑩ Flash Memory
1-MEGABIT (128K X 8) SINGLE 2.7-VOLT BATTERY-VOLTAGE⒙ FLASH MEMORY
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AC 12C 12#12 SKT RECP
JT 100C 100#22D SKT RECP
AT49BV001A(N)(T) [Updated 9/03. 18 Pages] 128K x 8 (1M bit). 2.7-Volt Read and Write. Top or Bottom Boot Parametric Block Flash.
AC 6C 3#16 3#4 SKT RECP
Circular Connector; No. of Contacts:55; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 1兆位128K的8）单2.7伏电池电压⑩闪存
1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 128K X 8 FLASH 2.7V PROM, 55 ns, PQCC32
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage??Flash Memory
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| AT49SV802A-90TI AT49SV802A-90CU |
8-megabit 1.8-volt Only Flash Memory 8兆位1.8伏，只有闪存
8-megabit 1.8-volt Only Flash Memory 512K X 16 FLASH 1.8V PROM, 90 ns, PBGA48
|
Atmel, Corp.
ATMEL Corporation
|
| S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆，32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc.
PROM
Spansion, Inc.
SPANSION LLC
|
| AT45DB081D AT45DB081D-SU-2.5 AT45DB081D-SSU-2.5 AT |
8-megabit 2.5-volt or 2.7-volt DataFlash 8M X 1 FLASH 2.7V PROM, PDSO8
|
Atmel Corp.
Atmel, Corp.
|
| HY29F800ABT-55 HY29F800ABR-90 HY29F800ABR-12 HY29F |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位1Mx8/512Kx16），5伏只，闪
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 55 ns, PDSO48
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位Mx8/512Kx16），5伏只，闪
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| S29CD-J S29CL032J S29CD016J S29CD016J0JFAI000 S29C |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
|
SPANSION[SPANSION]
|
| AM29LV160DB-70WCE AM29LV160DT-70WCE AM29LV160DB-70 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO44
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16Mb(2M×81Mx16, 3V, CMOS引导扇区闪存
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AT45DB041-JC AT45DB041-TC AT45DB041-CI AT45DB041-R |
4-Megabit 2.7-volt Only Serial DataFlash
4-Megabit 2.7-volt Only Serial DataFlash 528K X 8 FLASH 2.7V PROM, PBGA24
|
ATMEL Corporation
Atmel, Corp.
Atmel Corp.
|
| AT49F1024 AT49F1024-50VC |
x16 Flash EEPROM
From old datasheet system
1-megabit (64K x 16) 5-volt Only Flash Memory
1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
