| PART |
Description |
Maker |
| STB25NM50N-1 STF25NM50N STW25NM50N STP25NM50N STB2 |
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 500V - 0.11楼? - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 500V - 0.11ヘ - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STB13NM50N STB13NM50N-1 STP13NM50N STF13NM50N STW1 |
N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh?/a> Power MOSFET
N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh Power MOSFET
N-channel 500V - 0.250ヘ - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STF6NM60N STP6NM60N STD6NM60N STD6NM60N-1 |
N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET
N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.85ヘ - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| M5LV-512/256-10SAI M5LV-512/256-12SAC M5LV-256/160 |
EE PLD, 10 ns, PBGA352 BGA-352
EE PLD, 12 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
EE PLD, 15 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP144
EE PLD, 15 ns, PQFP160 PLASTIC, QFP-160
CONNECTOR ACCESSORY EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP100
EE PLD, 15 ns, PQFP100 TQFP-100
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
EE PLD, 12 ns, PQFP100 TQFP-100
EE PLD, 12 ns, PBGA256 BGA-256
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| STF10NM65N STD10NM65N STP10NM65N STU10NM65N |
N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh?/a> Power MOSFET
N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh Power MOSFET
N-channel 650 V - 0.43 ヘ - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STP8NM60N STF8NM60N STD8NM60N STD8NM60N-1 |
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh?/a> Power MOSFET
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh Power MOSFET
N-channel 600 V - 0.56 ヘ - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| STP28NM50N STB28NM50N |
N-channel Power MOSFETs developed using the second generation of MDmesh
|
STMicroelectronics
|
| APT10026JLL_03 APT10026JLL APT10026JLL03 |
30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT5010B2LL |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
|
Microsemi Corporation
|
