| PART |
Description |
Maker |
| ZXT10N50DE6 ZXT10N50DE6TA ZXT10N50DE6TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
NPN Low Sat Transistor
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR 50V NPN硅低饱和开关晶体管
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
Zetex Semiconductor PLC
|
| 2SD1760 2SD1864 2SD1864P 2SD1760Q |
Power Transistor 50V, 3A 功率晶体0VA
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-252 晶体管|晶体管|叩| 50V五（巴西）总裁| 3A条一（c）|52
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | SIP
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2DA1213O-15 2DA1213O-13 2DA1213Y-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
50V PNP POWER SWITCHING TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| 2DC2412R-7 2DC2412R |
50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
|
Vishay Siliconix
Diodes
|
| CDD2395F CDD2395 |
2.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 60 - 320 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-220AB
|
Continental Device India Limited
|
| DTC124TC DTA124TC DTA1D3RE DTC1D3RE DTA114WC DTC11 |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SOT-23
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | TO-92VAR
TRANSISTOR | SIP
晶体管| 50V五（巴西）总裁| 100mA的一c）| SOT - 23封装
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 500mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五（巴西）总裁| 100mA的一c）|的SOT - 23VAR
TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁|提供70mA一（c）| SOT - 23封装
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁| 100mA的一（c）| SOT - 23封装
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 100mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 23VAR
|
FCI
Analog Devices, Inc.
Rohm Co., Ltd.
TE Connectivity, Ltd.
Diodes, Inc.
Kingbright, Corp.
|
| 2SC4295M 2SC4295MN 2SC4295MP 2SC4295MQ 2SD2279P 2S |
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 200MA I(C) | SIP
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SC-71 晶体管|晶体管|叩| 50V五（巴西）总裁| 200mA的一（c）|律师- 71
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SIP 晶体管|晶体管|叩| 50V五（巴西）总裁| 200mA的一（c）|园区
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 50V五（巴西）总裁| 5A条一（c）|园区
晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|园区
晶体管|晶体管|叩| 50V五（巴西）总裁| 5A条一（c）|律师- 71
5个引#181;带看门狗和手动复位的P监控电路
晶体管|晶体管|叩| 25V的五（巴西）总裁| 50mA的一（c）|园区
晶体管|晶体管|叩| 20V的五（巴西）总裁| 1A条一（c）|律师- 71
晶体管|晶体管|叩| 400V五（巴西）总裁| 100mA的一（c）|律师- 71
晶体管|晶体管|叩| 25V的五（巴西）总裁| 200mA的一（c）|律师- 71
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SIP
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 3A I(C) | SIP
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SC-71
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SIP
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SIP
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SC-71
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | SIP
TRANSISTOR|BJT|NPN|400VV(BR)CEO|100MAI(C)|SC-71
|
Power Integrations, Inc.
|
| IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO
Power MOSFET(Vdss=50V)
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| CD9014C CD9014D CD9014D1 CD9014D3 CD9014E CD9014D2 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 - 600 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 100 - 300 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 150 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 1000 hFE
NPN SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| DDTA114ECA DDTA115ECA DDTA123ECA DDTA124ECA DDTA14 |
CAP .0082UF 50V PPS FILM 1206 5%
PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR 进步党预偏置信号小的SOT - 23表面贴装晶体
CAP .22UF 50V PPS FILM ECH-S
|
DIODES[Diodes Incorporated]
Diodes, Inc.
Diodes Inc.
|
| UMA9N FMA9 FMA9A FMA9N |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-88A
Digital transistor (Common Emitter Dual Transistors)
|
Rohm CO.,LTD.
Microsemi Corporation
ROHM[Rohm]
|
