PART |
Description |
Maker |
SM6007 |
Built in active discharge circuit for fast turn-off
|
Solid State Optronic
|
SM6003 |
Built in active discharge circuit for fast turn-off
|
Solid State Optronic
|
SM8030 |
Built in active discharge circuit for fast turn-off
|
Solid State Optronic
|
NTE2025 |
Integrated Circuit Quad HV Driver for Gas−Discharge Display
|
NTE Electronics
|
ST95040 ST95040B1TR ST95040B3TR ST95040B6TR ST9504 |
4K serial SPI EEPROM with positive clock strobe 4/2/1 KBITS SERIAL SPI EEPROM WITH POSITIVE CLOCK STROBE (ST950x0) 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe MOSFET, N SOT-23MOSFET, N SOT-23; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SOT-23; Current, Id cont:2.6A; Current, Idm pulse:10A; Power, Pd:0.75W; Resistance, Rds on:0.07R; SMD:1; Current, Id 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe 4K/2K/1K串行SPI EEPROM,带有正时钟选 SPI Serial EEPROM SPI串行EEPROM 2K serial SPI EEPROM with positive clock strobe
|
ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
C0603C102K2RECAUTO |
Ceramic, Electro Static Discharge, ESD-AUTO, 1000 pF, 10%, 200 V, 0603, X7R, SMD, MLCC, Temperature Stable, Electro Static Discharge, Automotive Grade
|
Kemet Corporation
|
C1206C102KAGECAUTO |
ESD SMD Auto C0G, Ceramic, Electro Static Discharge, 1000 pF, 10%, 250 V, C0G, SMD, MLCC, Temperature Stable, Electro Static Discharge, Automotive Grade, 1206
|
Kemet Corporation
|
C1206X104K3GECAUTO |
ESD SMD Auto C0G, Ceramic, Electro Static Discharge, 0.1 uF, 10%, 25 V, C0G, SMD, MLCC, Temperature Stable, Electro Static Discharge, Automotive Grade, 1206
|
Kemet Corporation
|
2SC4684 E000977 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SC3072 E000784 |
From old datasheet system TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
RN1001 RN1002 RN1006 RN1003 RN1004 RN1005 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 开关,逆变电路,接口电路及驱动电路应用
|
TOSHIBA[Toshiba Semiconductor] Toshiba, Corp.
|
2SD8792 |
1.5V, 3V STROBE APPLICATIONS
|
Unisonic Technologies
|
|