| PART |
Description |
Maker |
| HM472114 |
1024 x 4-Bit SRAM
|
Hitachi
|
| HM62V8100I HM62V8100LTTI-5SL HM62V8100L HM62V8100L |
Wide Temperature Range Version 8 M SRAM (1024-kword ? 8-bit)
Wide Temperature Range Version 8 M SRAM (1024-kword ?8-bit)
Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit)
|
RENESAS[Renesas Electronics Corporation]
|
| HM628100I HM628100LTTI-5SL |
Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit)
|
Renesas Electronics Corporation
|
| HM628100I-15 |
Wide Temperature Range Version 8 M SRAM (1024-kword ′ 8-bit)
|
Renesas Electronics Corporation
|
| EN29LV160AT-70BI EN29LV160AT-90BC EN29LV160AT-90BC |
Replaced by PTN78000W : 16兆位048K × 8 - 1024 kX6位）闪存
Replaced by PTN78000W : 12VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
|
Electronic Theatre Controls, Inc.
Eon Silicon Solution Inc.
|
| AM91L14 AM9114 |
(AM91L14 / AM9114) 1024 x 4 SRAM
|
AMD
|
| UEP-5/3500-D48 UEP-5/3500-D24 UEP-15/1200-D24 UEP- |
3.3V, 32 Mbit (1024 KBit x 32) TIMEKEEPER® SRAM
Multi-channel clock distribution circuit
Serial real-time clock with 44 bytes NVRAM and reset
Serial I2C bus RTC with battery switchover
3.3V, 32 Mbit (1024 KBit x 32) TIMEKEEPER® SRAM 模拟IC
Serial SPI bus RTC with battery switchover 模拟IC
|
Murata Power Solutions, Inc.
|
| M440T1MV-15ZA9 M440T1MV |
3.3V, 32 Mbit (1024 Kbit x 32) TIMEKEEPER SRAM
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit)
R1LP0408C-I Series Datasheet 78K/AUG.01.03
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Renesas
|
| IM5603 IM5623 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY 1024位电可编程只读存储器双极
(IM5603 / IM5623) ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY
|
Intersil, Corp.
Intersil Corporation
|
| R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
|
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| CXK1012 CXK1012P |
1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY
|
SONY[Sony Corporation]
|
