| PART |
Description |
Maker |
| WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Cypress Semiconductor
|
| HD6844 HD68B44 |
(HD68x44) Direct Memory Access Controller
|
Hitachi
|
| Z8410 Z84C10 |
Z80 DMA Direct Memory Access Controller
|
Zilog, Inc.
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| SI3035 SI3021-BS SI3021-KS SI3021-KT SI3024-KT SI3 |
3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT
3.3V FCC/JATE direct access arrangement, digital interface
3.3 V FCC/JATE DAA (Direct Access Arrangement) digital interface
|
Silicon Laboratories
|
| IDT70825L IDT70825L20G IDT70825L20GB IDT70825L20PF |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
|
IDT[Integrated Device Technology]
|
| MCM6810 MCM6810CP MCM6810CS MCM6810P MCM6810S |
1 MHz; V(cc/in): -0.3 to 7.0V; 450ns; 128 x 8-bit randon-access memory
128 8-bit Random-Access Memory
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压，大电流达林顿阵列
50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
| SI3016-F-FS |
3.3 V ENHANCED GLOBAL DIRECT ACCESS ARRANGEMENT SPECIALTY CONSUMER CIRCUIT, PDSO16
|
Silicon Laboratories, Inc.
|
| MDT10P257P11 |
8-bit micro-controlle
|
Micon Design Technology...
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
