| PART |
Description |
Maker |
| EDL5132CBMA-10-E |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
Elpida Memory, Inc.
|
| EDE5116AFSE-5C-E EDE5116AFSE-6E-E EDE5116AFSE-4A-E |
512M bits DDR2 SDRAM (32M words x 16 bits)
|
Elpida Memory, Inc.
|
| K9F4G08U0M K9K8G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| IDT72T51333L5BB IDT72T51353L6BBI IDT72T51333 IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
IDT[Integrated Device Technology]
|
| EDD51161DBH-5BTS-F EDD51161DBH-6ETS-F EDD51161DBH- |
512M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range)
512M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range)
|
http://
Elpida Memory
|
| EDX5116ADSE-3A-E EDX5116ADSE-3B-E EDX5116ADSE-3C-E |
512M bits XDR DRAM
512M bits XDR?/a> DRAM
|
Elpida Memory
|
| EDE5108AHSE-4A-E EDE5116AHSE-4A-E EDE5108AHSE-5C-E |
512M bits DDR2 SDRAM
|
Elpida Memory
|
| EDE5108AESK-6E-E EDE5104AESK EDE5104AESK-4A-E EDE5 |
512M bits DDR2 SDRAM
|
ELPIDA[Elpida Memory]
|
| EDE5116ABSE EDE5116ABSE-4A-E EDE5116ABSE-5C-E EDE5 |
512M bits DDR2 SDRAM
|
ELPIDA[Elpida Memory]
|
| EDD5108ADTA-5C |
512M bits DDR SDRAM
|
Elpida Memory, Inc.
|
| EDD5116AGTA EDD5116AGTA-5B-E EDD5116AGTA-5C-E |
512M bits DDR SDRAM
|
Elpida Memory
|
