| PART |
Description |
Maker |
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| CY62156ESL-45BVXI |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
| CY62157E |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
| UPD4265800LE-A80 UPD4264800LE-A80 UPD4265800LE-A70 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
64K x 16 Static RAM
1K x 8 Dual-Port Static RAM
1-Mbit (64K x 16) Static RAM x8快速页面模式的DRAM
|
STMicroelectronics N.V.
|
| UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| CY62157EV30LL-45ZSXA CY62157EV30LL-55ZXE CY62157EV |
8-Mbit (512 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| CY62157ELL-45ZSXI CY62157ELL-55BVXE |
8-Mbit (512 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| CY62126EV30 CY62126EV30LL CY62126EV30LL-45ZSXI CY6 |
1-Mbit (64 K x 16) Static RAM Automatic power down when deselected
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| ST1335 ST1355-CW4 ST1335-BD10 ST1335-BD15 ST1335-B |
5-CONTACT MEMORY CARD IC 272 BIT EEPROM WITH ADVANCED SECURITY MECHANISMS
5V, 3.3V, ISR™ High-Performance CPLDs
NX2LP DEVELOPMENT KIT
KIT DEV MOBL-USB FX2LP18
MoBL® 4-Mbit (256K x 16) Static RAM
MoBL® 1-Mbit (64K x 16) Static RAM
MoBL® 1 Mbit (128K x 8) Static RAM
MoBL® 2-Mbit (128K x 16) Static RAM
(ST1335/13361355) 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms
MoBL® 1-Mbit (64K x 16) Static RAM EEPROM
5V, 3.3V, ISR™ High-Performance CPLDs EEPROM
MoBL® 4-Mbit (256K x 16) Static RAM EEPROM
5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 5，联系记忆卡IC 272位具有高级安全机制的EEPROM
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
