| PART |
Description |
Maker |
| HYB25D256400BC-5 |
256Mbit Double Data Rate (DDR) Components
|
Infineon
|
| MT46H8M16LF |
Mobile Double Data Rate (DDR) SDRAM 移动双倍数据速率（DDR）SDRAM内存
|
Micron Technology, Inc.
|
| HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
| W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
| MT46V32M16TG-75 MT46V32M16TG-75L MT46V32M16TG-75Z |
DOUBLE DATA RATE DDR SDRAM
|
Micron Technology
|
| W942504CH-75 |
DDR SDRAM (Double Data Rate)
|
Winbond Electronics
|
| SAA32M4 SAA32M4YX6XR4TL SAA32M4YX6XV4TL SAA32MXXX |
DOUBLE DATA RATE (DDR) SDRAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| MT46V32M16 MT46V128M4 |
(MT46Vxxx) DOUBLE DATA RATE DDR SDRAM
|
Micron Technology
|
| K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
128Mbit DDR SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| H5MS5162EFR |
536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
|
Hynix Semiconductor
|
| GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM
1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
