PART |
Description |
Maker |
GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM 8ns 1M x 4 4Mb asynchronous SRAM 12ns 1M x 4 4Mb asynchronous SRAM
|
http:// GSI Technology
|
GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM 12ns 256K x 18 4Mb sync burst SRAM 8.5ns 256K x 18 4Mb sync burst SRAM 8ns 256K x 18 4Mb sync burst SRAM 10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
AT45DCB008 AT45DCB002 AT45DCB004 |
8-megabyte 4-megabyte, and 2-megabyte 2.7-volt Only DataFlash Cards 32M X 1 FLASH 2.7V PROM CARD, XMA7 8M byte, 4MB byte, 2M byte, 2.7-Volt Only, Serial Interface DataFlash Cards From old datasheet system 8M byte, 4M byte, 2M byte, 2.7-Volt Only, Serial Interface DataFlash Cards
|
Atmel, Corp. Atmel Corp.
|
IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM) 4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的(128K的36)的SRAMMb的(128K的36)寄存器锁存模式的同步的CMOS静态RAM)的
|
IBM Microeletronics International Business Machines, Corp.
|
IBM0418A81QLAB IBM0418A41QLAB |
8Mb (512 x 18) SRAM(8M( 512x 18 ) 同步流水线式高性能CMOS静态RAM) 4Mb (256K x 18) SRAM(4M( 256Kx 18) 同步流水线式高性能CMOS静态RAM)
|
IBM Microeletronics
|
MTCF032A MTCF004A MTCF016A MTCF010A MTCF008A |
32Mb CompactFlash Card(32Mb闪速存储器 4Mb CompactFlash Card(4MB闪速存储器 16Mb CompactFlash Card(16Mb闪速存储器 8Mb CompactFlash Card(8Mb闪速存储器 10Mb CompactFlash Card(10Mb闪速存储器 10MB的CompactFlash卡(10Mb闪速存储器卡)
|
Micron Technology, Inc.
|
IBM0418A41BLAB |
(IBM04xxAx1BLAB) 8Mb and 4Mb SRAM
|
IBM Corporation
|
GS74116U-15 |
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 15 ns, PBGA48
|
GSI Technology, Inc.
|
GS842Z18AB-180I GS842Z18AB-100 GS842Z18AB-100I GS8 |
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8 ns, PBGA119 4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 12 ns, PBGA119 4Mb Pipelined and Flow Through Synchronous NBT SRAMs 128K X 36 ZBT SRAM, 8 ns, PBGA119 4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 10 ns, PBGA119 4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
HY62KF16403E |
Super Low Power Slow SRAM - 4Mb
|
Hynix Semiconductor
|
GS840F18AT-8.5 |
8.5ns 256K x 18 4Mb sync burst SRAM
|
GSI Technology
|
HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0(VDD)在3.0(提供VDDQ)V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|