| PART |
Description |
Maker |
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16S72BDFA-7 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 1207959552位（16,777,21672位）同步动态随机存储器
|
Mitsubishi Electric, Corp.
|
| M6MGT160S2BVP M6MGB160S2BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M29GB160BVP M5M29GB160BVP-80 M5M29GT160BVP M5M29 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
From old datasheet system
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M6MGB166S4BWG M6MGT166S4BWG M6MGB E99008 |
From old datasheet system
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Semiconductor
|
| M5M29GT160BVP-80 M5M29GB160BVP-80 |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Mitsubishi Electric Corporation
|
| THMY721661BEG-10 THMY721661BEG-80 THMY721661BEG |
16/777/216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE
16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE
|
TOSHIBA[Toshiba Semiconductor]
|
| MH16S72DCFA-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
http://
|
| MH16S72DCFA-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGB_T166S4BWG M6MGB E99008_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
|
Mitsubishi
|
| MH16D64AKQC-75 MH16D64AKQC-10 |
1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MD51V64405 |
16,777,216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
OKI[OKI electronic componets]
|
