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LY62102516 - 1024K X 16 BIT LOW POWER CMOS SRAM

LY62102516_1242748.PDF Datasheet


 Full text search : 1024K X 16 BIT LOW POWER CMOS SRAM
 Product Description search : 1024K X 16 BIT LOW POWER CMOS SRAM


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EN29LV160JB70S EN29LV160JB70SI EN29LV160JB70SIP EN Replaced by PTN78000W : 16兆位048K × 8 1024K x 16位)闪存引导扇区闪存,CMOS 3.0伏,
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Electronic Theatre Controls, Inc.
http://
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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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EN29LV160JT70S EN29LV160JT70SI EN29LV160JT70SIP EN 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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EN29SL800T-90TC EN29SL800T-90TCP EN29SL800T-90TI E 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only
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EN29LV800T70RS EN29LV800T70RSI EN29LV800T70RSIP EN 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
Eon Silicon Solution Inc.
ETC
 
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