| PART |
Description |
Maker |
| KI4562DY |
PIN Configuration Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -12V
|
TY Semiconductor Co., Ltd
|
| KI4953DY |
100per Rg Tested Drain-Source Voltage Vds -30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KI5902DC |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KI5904DC |
Drain-Source Voltage VDS 20V Gate-Source Voltage VGS -12V
|
TY Semiconductor Co., Ltd
|
| KI9926A |
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., Ltd
|
| FTD2011 |
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V
|
TY Semiconductor Co., Ltd
|
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| TD62783784AP TD62783AFW TD62784AFW TD62783AP |
8CH HIGH−VOLTAGE SOURCE DRIVER
8CH HIGH-VOLTAGE SOURCE DRIVER
8CH HIGH−VOLTAGE SOURCE DRIVER
8CH HIGH .VOLTAGE SOURCE DRIVER
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| ADR360 ADR361 ADR363 ADR364 ADR365 ADR366 |
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 2.048 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 2.5 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 3.0 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 4.096 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 5.0 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 3.3 V-OUT
|
Analog Devices
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| SI1303DL |
Drain-Source Voltage
|
TY Semiconductor Co., L...
|
| UDN6510A UDN6514R UDN-6510A UDN6510R UDN-6510R UDN |
HIGH-VOLTAGE SOURCE DRIVERS
High Voltage Source Drivers
|
ETC[ETC]
Sprague Electric
|
