| PART |
Description |
Maker |
| HFR8A06F |
Glass Passivated Hyperfast Recovery Re
|
YENYO TECHNOLOGY Co., Ltd
|
| HFR15A12D |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| HFR8A12 |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| HFR8A12D |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY
|
| HFR15A06 |
Glass Passivated HyperFast Recovery Rectifier
|
YENYO TECHNOLOGY
|
| HFR8A12DF |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| TXN05 TXN100 TYN40 TYN80K TXN058 TXN05G TXN05K TXN |
THYRISTORS
V(drm): 50V; 8A; glass passivated thyristor
V(drm): 1000V; 8A; glass passivated thyristor
V(drm): 100V; 8A; glass passivated thyristor
V(drm): 200V; 8A; glass passivated thyristor
V(drm): 400V; 8A; glass passivated thyristor
V(drm): 600V; 8A; glass passivated thyristor
V(drm): 800V; 8A; glass passivated thyristor
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| HER30-1500G |
Fast Recovery Pack: DO-201AD
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞1500V CURRENT拢潞 3.0A
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?500V CURRENT 3.0A
|
Gulf Semiconductor
|
| 1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
Diodes
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
|
Vishay Beyschlag
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
