| PART |
Description |
Maker |
| WV3EG128M72EFSR335D3SG |
1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL, FBGA 1GB 128Mx72 DDR SDRAM的注册瓦锁相环，FBGA封装
|
Electronic Theatre Controls, Inc.
|
| HYB18T1G160AC-3.7 HYB18T1G160AC-5 HYB18T1G400AC-3. |
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 400 (3-3-3); Available 3Q04
|
Infineon
|
| S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW |
32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
|
SPANSION LLC
Spansion, Inc.
|
| MSM4E104EX |
4x 1Gb LAN
|
Advanced Digital Logic, Inc.
|
| H26M11001BAR |
1GB e-NAND
|
Hynix
|
| EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存（128M的话x72位，2个等级）
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| KFG1G16Q2C |
1Gb OneNAND C-die
|
Samsung Electronics
|
| TS1GJF110 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| TS1GJFV10 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| H5PS1G63JFR H5PS1G63JFRC4C H5PS1G63JFRC4I H5PS1G63 |
1Gb DDR2 SDRAM
|
Hynix Semiconductor
|
| H5TQ1G63EFRG7J H5TQ1G63EFRG7C H5TQ1G63EFRG7I H5TQ1 |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| TS1GJFV33 |
1GB USB2.0 JetFlash鈩33
|
Transcend Information. Inc.
|
