| PART |
Description |
Maker |
| AN671 |
ST6 - PREVENTION OF DATA CORRUPTION IN ST6 ON-CHIP EEPROM
|
SGS Thomson Microelectronics
|
| 2N6796LCC4 |
N-Channel Power MOSFET（Vdss00VId(cont).4A，Rds(on).18ΩN沟道功率型MOS场效应管（Vdss00VId(cont).4A，Rds(on).18Ω
|
SEME-LAB[Seme LAB]
|
| SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
|
| AN911 |
ST6 IS EMC CHAMPION
|
SGS Thomson Microelectronics
|
| AN678 |
ST6 - LCD DRIVING WITH ST6240
|
SGS Thomson Microelectronics
|
| IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| AN1016 |
ST6 - NOTES ON USING THE ST623XB/ST628XB UART
|
SGS Thomson Microelectronics
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| AN859 |
ST6 - AN INTELLIGENT ONE HOUR MULTICHARGER FOR LI-ION, NIMH AND NICD BATTERIES
|
SGS Thomson Microelectronics
|
| U3665M U3665M-MDP U3665M-MFP |
SPECIALTY CONSUMER CIRCUIT, PDIP16
Baseband Delay Line 64 us (Improved Version)
Baseband Delay Line 0.064 ms (Improved Version)
|
TEMIC[TEMIC Semiconductors]
|
| AN1464 |
ST6 - LOW-COST DOUBLE LI-ION BATTERY CHARGER USING ST6255C/ST6265C MCU
|
SGS Thomson Microelectronics
|
| IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
