| PART |
Description |
Maker |
| UPD65894GJ-XXX-UEN |
0.5um Process Channel-less CMOS Gate Array
|
NEC
|
| PEB2465H |
Voice Access - SICOFI4 (IOM) Single Chip CMO
|
Infineon
|
| TS87C51RD2 TS83C51RD2 |
Qualification Package TS87C51RD2 / TS83C51RD2 CMOS 0.5Um
|
ATMEL[ATMEL Corporation]
|
| 75757-1421 |
3.50mm (.138) Pitch, MX150 Header, Breakaway, Vertical, 4 Circuits, 1.5um (60u) Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| IRLU3705ZPBF IRLR3705ZPBF IRLR3705ZPBF-15 |
42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Advanced Process Technology
|
International Rectifier
|
| IRF3710ZSPBF IRF3710ZPBF |
59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Advanced Process Technology
|
International Rectifier
|
| IRLI3215PBF |
150V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220FullPAK package
Advanced Process Technology
|
International Rectifier
|
| AIC809N31CUBG AIC809N31CUTR AIC809N31PUBG AIC809N3 |
N-CH MOSFET SO8BWL 8MOHMS AT 10V PWM OPTIMIZED - LEAD FREE VERSION 3引脚微处理器复位电路
MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6.9A; On-Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Leaded Process Compatible:No 3引脚微处理器复位电路
3-PIN MICROPROCESSOR RESET CIRCUITS 3引脚微处理器复位电路
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:12A; On-Resistance, Rds(on):0.0085ohm; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:surface mount; Peak Reflow Compatible (260 C):No
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:11A; On-Resistance, Rds(on):0.011ohm; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:surface mount; Peak Reflow Compatible (260 C):No
2.54mm Pitch SIL Vertical PC Tail Pin Header, 7mm mating pin height, tin, 2-way
ALL.CLIP, EX-LARGE IEC1010 KIT RoHS Compliant: Yes
(AIC809 / AIC810) 3-PIN MICROPROCESSOR RESET CIRCUITS
|
Analog Integrations, Corp.
Analog Integrations Corporation
AIC[Analog Intergrations Corporation]
|
| AMS431L AMS431LA AMS431LAL AMS431LAM AMS431LAM1 AM |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:Yes .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No
1.2V SHUNT REGULATOR
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
|
