| PART |
Description |
Maker |
| UPD65882F1-XXX-CN1 UPD65883GJ-XXX-UEN UPD65887GJ-X |
CMOS的家庭手册北5 |小册子[08/2001]
0.5um Process Channel-less CMOS Gate Array
|
NEC
|
| HFBR-789B HFBR-779B |
HFBR-789B · 12 x 2.5GBd Parallel Optic Pluggable Receiver for 62.5um fiber
HFBR-779B · 12 x 2.5GBd Parallel Optic Pluggable Transmitter for 62.5um fiber
|
Agilent (Hewlett-Packard)
|
| 0757576431 75757-6431 |
3.50mm (.138") Pitch, MX150 Header, Breakaway, Vertical, 6 Circuits, 1.5um (60u") Tin (Sn) Plating
3.50mm (.138) Pitch, MX150 Header, Breakaway, Vertical, 6 Circuits, 1.5um (60u) Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| MB85R256G |
256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies
|
http://
|
| DK48N18 |
70V,158A N-Channel Trench Process Power MOSFET
|
Thinki Semiconductor Co...
|
| CS48N80 |
70V,87A N-Channel Trench Process Power MOSFET
|
Thinki Semiconductor Co...
|
| IRFL024ZPBF IRFL024ZTRPBF IRFL024ZPBF-15 |
5100 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Advanced Process Technology
|
International Rectifier
|
| IRL2505SPBF IRL2505STRRPBF IRL2505SPBF-15 |
104 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
ADVANCED PROCESS TECHNOLOGY
|
International Rectifier
|
| AUIRL3705ZS AUIRL3705ZSTRR AUIRL3705ZL AUIRL3705ZS |
75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Logic Level Advanced Process Technology
|
International Rectifier
|
| RN4607 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| AN79L05 AN79L05M AN79LXXM AN79L04 AN79L05_M AN79L0 |
3-pin negative output voltage regulator (100 mA type)
3-pin negative output voltage regulator (100 mA type) 5 V FIXED NEGATIVE REGULATOR, PBCY3
3-pin negative output voltage regulator (100 mA type) 3针负输出电压调节器（100毫安型）
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):5.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
General-Purpose Linear IC - Voltage Regulater - 3-Pin Regulator
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
|
