PART |
Description |
Maker |
RURG30100 FN3213 |
30A/ 1000V Ultrafast Diode 30A, 1000V Ultrafast Diode From old datasheet system
|
INTERSIL[Intersil Corporation]
|
APT5017BVR |
POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT10086SVR |
POWER MOS V 1000V 13A 0.860 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT1001RBVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 1000V 11A 1.000 Ohm
|
Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
|
APT10045B2LL APT10045LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
APT12040JLL |
POWER MOS 7 1000V 24A 0.400 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
PT308 PT3010 |
DIODE MODULE 30A/800V/1000V
|
NIEC[Nihon Inter Electronics Corporation]
|
RURP30100 FN2877 |
From old datasheet system 30A, 1000V Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|
RJK0305DPB-02-15 |
30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|