PART |
Description |
Maker |
MGFC40V4450A C404450A |
From old datasheet system 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
TGA2216-SM TGA2216-SM-15 |
0.1 3.0GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
SY55858UHITR SY55858U_05 SY55858U SY55858UHG SY558 |
2.5V/3.3V 3.0GHZ DUAL 2 x 2 CML CROSSPOINT SWITCH W/INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
1N2981D 1N2987C 1N2973D 1N2987D 1N2989C 1N2980D 1N |
Diode Zener Single 17V 5% 10W 2-Pin DO-4 Diode Zener Single 25V 5% 10W 2-Pin DO-4 Diode Zener Single 9.1V 5% 10W 2-Pin DO-4 Diode Zener Single 30V 5% 10W 2-Pin DO-4 Diode Zener Single 16V 5% 10W 2-Pin DO-4 Diode Zener Single 7.5V 5% 10W 2-Pin DO-4 Diode Zener Single 24V 5% 10W 2-Pin DO-4 Diode Zener Single 175V 20% 10W 2-Pin DO-4 Diode Zener Single 50V 5% 10W 2-Pin DO-4 Diode Zener Single 43V 5% 10W 2-Pin DO-4 Diode Zener Single 56V 5% 10W 2-Pin DO-4 Diode Zener Single 13V 5% 10W 2-Pin DO-4 Diode Zener Single 8.2V 5% 10W 2-Pin DO-4 Diode Zener Single 15V 5% 10W 2-Pin DO-4 Diode Zener Single 27V 5% 10W 2-Pin DO-4 Diode Zener Single 18V 5% 10W 2-Pin DO-4 Diode Zener Single 105V 5% 10W 2-Pin DO-4 Diode Zener Single 52V 5% 10W 2-Pin DO-4 Diode Zener Single 47V 10% 10W 2-Pin DO-4 Diode Zener Single 36V 10% 10W 2-Pin DO-4 Diode Zener Single 36V 5% 10W 2-Pin DO-4 Diode Zener Single 51V 5% 10W 2-Pin DO-4 Diode Zener Single 47V 5% 10W 2-Pin DO-4
|
New Jersey Semiconductor
|
SY89875U_07 SY89875U SY89875UMG SY89875UMGTR SY898 |
2.5V, 2.0GHz ANY DIFF. IN-TO-LVDS PROGRAMMABLE CLOCK DIVIDER AND 1:2 FANOUT BUFFER W/ INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
MGFC40V4450_04 MGFC40V4450 MGFC40V445004 |
4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MA510CAG005 |
Heavy Duty Screw Mount Antenna MIMO Dual Band 2.4/5.0GHz
|
List of Unclassifed Manufacturers
|
TDA7497 |
10W 10W 10W/15W TRIPLE AMPLIFIER 10 10W STEREO AMPLIFIER WITH MUTE/ST-BY
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
RFHA3832 |
10W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
|