| PART |
Description |
Maker |
| K6F4016S4DFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4016R6DFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4016V6DFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| AKD5355 AK5355VN AK535505 AK5355VT |
Low Power 16bit ΔΣ ADC
|
Asahi Kasei Microsystems
Asahi Kasei Microsystem...
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| W964B6BBN70 W964B6BBN80E |
1M WORD X 16BIT LOW POWER PSEUDO SRAM 1M X 16 PSEUDO STATIC RAM, 65 ns, PBGA48
|
Winbond Electronics, Corp.
WINBOND ELECTRONICS CORP
|
| K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| AMF-3D-001080-18-13P AMF-4F-00100100-15-10P AMF-4F |
100 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
5400 MHz - 5900 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
500 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
30000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
4400 MHz - 5100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1500 MHz - 1800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
38000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
40000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
41000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
12000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
3000 MHz - 3500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
250 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
15000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
30 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
18000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
36000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7900 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2100 MHz - 2400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
200 MHz - 400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
50 MHz - 100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6400 MHz - 7200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
15500 MHz - 16500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
950 MHz - 1450 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
9500 MHz - 10500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
800 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
9000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
4000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
18000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
