| PART |
Description |
Maker |
| S25FL128P0XNFI001 S25FL128P0XMFI013 S25FL128P0XNFI |
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus 16M X 8 FLASH 3V PROM, DSO8
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus 16M X 8 FLASH 3V PROM, PDSO16
|
Spansion, Inc.
SPANSION LLC
|
| LH28F016SCHB LH28F016SCHB-L95 LHF16C13 LH28F016SCR |
LH28F016SCHSR-L120 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
LH28F016SCHSR-L150 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
LH28F016SCN-L100 16M (2M x 8)Smart Voltage Flash Memory
16Mbit Flash Memory
LH28F016SCR-L100 16M (2M x 8)Smart Voltage Flash Memory
LH28F016SCR-L120 16M (2M x 8)Smart Voltage Flash Memory
LH28F016SCR-L95 16M (2M x 8)Smart Voltage Flash Memory
LH28F016SCHSR-L100 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
|
SHARP[Sharp Electrionic Components]
|
| LH28F160BJHE-TTL90 LHF16J04 |
16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M 1Mx16 / 2Mx8 )Boot Block 闪速存储器)
Flash Memory 16M (1M × 16/2M × 8)
|
Sharp Corporation
Sharp Electrionic Components
|
| TC58FVM7T2AFT65 TC58FVM7B2 TC58FVM7B2AFT TC58FVM7B |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| S71PL129JC0_06 S71PL129JA0 S71PL129JB0 S71PL129JC0 |
Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory
|
SPANSION[SPANSION]
|
| S29PL256N65FAWW02 S29PL129N65FAWW00 S29PL256N65FAW |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION[SPANSION]
|
| AM29LV001BT-45RFCB AM29LV001BT-45RFIB AM29LV001BT- |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 8 FLASH 3V PROM, 90 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 8 FLASH 3V PROM, 55 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 8 FLASH 3V PROM, 45 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 8 FLASH 3V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 8 FLASH 3V PROM, 55 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1兆位28亩8位）的CMOS 3.0伏，只引导扇区闪
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1兆位128亩8位）的CMOS 3.0伏，只引导扇区闪
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM28F010 AM28F010-200JEB AM28F010-150FIB AM28F010- |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 200 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
CMOS Dual Binary Up-Counter 16-TSSOP -55 to 125
CMOS Dual Binary Up-Counter 16-SO -55 to 125
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
