| PART |
Description |
Maker |
| N08L163WC2C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| N08T1630CXB |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| GS88118 GS88136 GS88118GT-11IT GS88118GT-11.5IT GS |
512K x 18, 256K x 36 ByteSafe?/a> 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe8Mb Sync Burst SRAMs
8Mb锛?12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M浣??512K x 18浣??ByteSafe??????RAM锛?甫2浣???插?????板?锛?
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100
512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100
8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位（256K x 36位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
8Mb12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位（512K x 18位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
|
GSI Technology, Inc.
|
| GS78132AB |
8Mb Asynchronous SRAM
|
N.A.
|
| GS88032T--11.5I GS88036T--11.5I GS88036T-100I GS88 |
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 18 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100
|
GSI Technology, Inc.
|
| MT55L512L18F |
8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
| GS88118T-11.5 GS88118T-11.5I GS88118T-100 GS88118T |
512K x 18, 256K x 36 ByteSafe⑩ 8Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| MT58L1MV18D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8MB的：12k × 1856 × 32/36 3.3V的I / O的流水线，双氰胺SYNCBURST的SRAM
|
Micron Technology, Inc.
|
| GS78108B-12 GS78108B-12I GS78108B GS78108B-10 GS78 |
1M x 8 8Mb Asynchronous SRAM 1M X 8 STANDARD SRAM, 15 ns, PBGA119
|
GSI Technology, Inc.
|
| GS880F36T-11I GS880F36T-14I GS880F32T-12 GS880F36T |
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
http://
|
|
