PART |
Description |
Maker |
MCM5101 MCM5101C65 MCM5101C80 MCM5101P65 MCM51L01 |
CMOS 1024 BIT STATIC RANDOM ACCESS MEMORY From old datasheet system
|
Motorola, Inc
|
MCM1451L01 |
1024-Bit Static RAM
|
Motorola Semiconductor
|
AM2833 |
1024 Bit Static Shift Registers
|
MSIS Semiconductor
|
M2148H |
HIGH SPEED 1024 X BIT STATIC RAM
|
INTEL[Intel Corporation]
|
KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns 32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作),在商业和工业温度范围操作 32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
UPD2101AL-4 |
1024 BIT (256 X 4) STATIC MOS RAM WITH SEPARATE I/O
|
NEC Corp.
|
HM472114 HM472114P-4 HM472114-3 HM472114P-3 HM4721 |
1024-wordX4-bit Static Random Access Memory
|
Hitachi,Ltd. Hitachi Semiconductor
|
AM2833 AM2833PC AM2833DM AM2533 AM2533DC AM2533V A |
Voltage Regulator IC; Output Current:150mA; Output Voltage:2.5V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.5V 1024 Bit Static Shift Registers 1024-Bit Static Shift Registers
|
Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
|
UPD2102AL UPD2102AL-2 UPD2102AL-4 |
1024 BIT FULLY DECODED STATIC MOS RANDOM ACCESS MEMORY
|
NEC
|
M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-7 |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位(65536字由16位)的CMOS静态RAM From old datasheet system 1048576-1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
AM9112APC AM9112ADC |
SRAM,256X4,MOS,DIP,16PIN,PLASTIC SRAM,256X4,MOS,DIP,16PIN,CERAMIC From old datasheet system
|
AMD Inc
|