| PART |
Description |
Maker |
| KM23C32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32005BG |
32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000AG |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| K3N6C1000E-GCTCYC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| AS6C3216 |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Alliance Memory
|
| AS6C3216 AS6C3216-55TIN |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| DA28F320 |
IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,SOP,56PIN,PLASTIC
|
intel
|
| A82DL32X4T |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only Simultaneous Operation Flash Memory
|
AMIC Technology
|
| UPD4632312F9-BE95X-BT3 UPD4632312F9-CE10X-BT3 UPD4 |
Integrated H-bridge with sleep mode
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|77PIN|PLASTIC 伪静态内存| 2MX16 |的CMOS | BGA封装| 77PIN |塑料
|
Amphenol, Corp.
|
| HYE18P32161AC HYE18P32161ACL70 HYE18P32161ACL85 HY |
Specialty DRAMs - 2Mx16, VGBGA-48; Available 2Q04
32M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
