PART |
Description |
Maker |
Q62702-B599 BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Siemens Group
|
BBY53-03W Q62702-B0825 BBY5303W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管(Hyperabrupt交界调谐二极管频率线性调谐范 12五) Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BB837 BB857 |
Varactordiodes - Silicon tuning diode for SAT tuning units
|
INFINEON[Infineon Technologies AG]
|
KDV1430 KDV1430A KDV1430B KDV1430C KDV1430D |
Silicon diode for FM radio band tuning applications VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
Korea Electronics (KEC) KEC(Korea Electronics)
|
KDV269E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
KDV310E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
|
KEC(Korea Electronics)
|
KDV1471 |
FM Tuning VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDV1484E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING
|
KEC(Korea Electronics)
|