| PART |
Description |
Maker |
| HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc.
NXP Semiconductors N.V.
|
| HYM72V8025GS-60 HYM72V8025GS-50 HYM72V8035GS-60 HY |
8M x 72 Bit ECC EDO DRAM Module buffered
8M x 72-Bit EDO- DRAM Module (ECC - Module)
8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 60 ns, DMA168
8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| HYM324025GS-60 HYM324025GS-50 HYM324025S-60 HYM324 |
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 60 ns, SMA72
4M x 32-Bit EDO-DRAM Module 4米32位江户记忆体模组
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 50 ns, SMA72
4M x 32 Bit EDO DRAM Module
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IBM11N4735BB-70 IBM11N4645BB-60 |
x72 EDO Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
American Power Management, Inc.
|
| HYM368025GS-60 HYM368025GS-50 HYM368025S-60 HYM368 |
8M x 36-Bit EDO - DRAM Module
8M x 36 Bit EDO DRAM Module with Parity
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-6 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
4M x 4 CMOS DRAM (EDO) Family
|
Integrated Silicon Solution, Inc.
Alliance Semiconductor
|
| HYB3164165BT-40 HYB3165165BT-40 HYB3166165BT-40 HY |
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 60 ns, PDSO50
INDUCTOR CHIP .10UH 5% 0805 SMD 4M X 16 EDO DRAM, 60 ns, PDSO50
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 40 ns, PDSO50
|
http://
SIEMENS A G
SIEMENS AG
|
| MB8504E032AA-70SG |
4M X 32 EDO DRAM MODULE, 70 ns, PSMA72
|
FUJITSU LTD
|
| HB56SW832DZJ-6L |
8M X 32 EDO DRAM MODULE, 60 ns, DMA72
|
|
| VE16418165BTS-6 VE16418165BTSA-7 |
1M X 64 EDO DRAM MODULE, 60 ns, DMA168
1M X 64 EDO DRAM MODULE, 70 ns, DMA168
|
VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
|
