| PART |
Description |
Maker |
| HM5425161BTT-75A HM5425161BTT-75B HM5425401BTT-75A |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank
256M; 133MHz LVTTL interface SDRAM
256M; 100MHz LVTTL interface SDRAM
|
Elpida Memory
|
| HM5259405B-A6 HM5259405B-75 HM5259165B HM5259165B- |
PT 32C 32#20 PIN PLUG
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory, Inc.
|
| HM5264405FTT-75 HM5264805FTT-75 |
64M LVTTL interface SDRAM 133 MHz/100 MHz
|
http://
|
| HM5225165B HM5225165B-75 HM5225165B-A6 HM5225165B- |
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword ?16-bit ?4-bank/8-Mword ?8-bit ?4-bank /16-Mword ?4-bit ?4-bank PC/133, PC/100 SDRAM
|
Elpida Memory
|
| K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
CONNECTOR ACCESSORY 连接器附
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| K4S280432D-TC/L1H K4S280432D-TC/L1L K4S280432D-TC/ |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
|
Hynix Semiconductor
|
