PART |
Description |
Maker |
AM29F080 AM29F080-85FC |
Am29F080 - 8 Megabit (1.048.576 x 8-Bit) CMOS 5.0 Volt-only. Sector Erase Flash Memory Am29F080 - 8兆(1.048.576 × 8位)的CMOS 5.0伏特只。扇区擦除闪 1M X 8 FLASH 5V PROM, 85 ns, PDSO40
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Laird Technologies, Inc. SPANSION LLC
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AM29F800T-70 AM29F800T-90 AM29F800T-150SEB AM29F80 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 8兆位,048,576 x 8-Bit/52488 x 16位).0伏的CMOS只,扇区擦除闪存 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO44 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO48 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO44 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO48
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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AM29LV008T-100 AM29LV008B-100 AM29LV008B-120 AM29L |
8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
|
Advanced Micro Devices
|
AT52BR3228A AT52BR3224A AT52BR3228AT-70CI AT52BR32 |
32-megabit Flash 4-megabit/ 8-megabit SRAM Stack Memory 32兆位闪存4兆位/ 8兆位的SRAM堆栈内存
|
Atmel Corp. Atmel, Corp.
|
MSM538001E MSM538001E-XXGS-K MSM538001E-XXRS |
1,048,576字8位MASKROM From old datasheet system 1,048,576-Word x 8-Bit MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
ADR380 ADR380ART-REEL ADR380ART-REEL7 ADR381 ADR38 |
2.048 V and 2.5 V Bandgap Voltage References 2.048 V Bandgap Voltage Reference Precision Low-Drift 2.048 V/2.500 V SOT-23 Voltage References
|
AD[Analog Devices]
|
GM71C4403E-80 GM71C4403ELJ-80 GM71C4403E-60 GM71C4 |
MC 41C 27#20 14#16 PIN PLUG MB 41C 27#20 14#16 SKT PLUG Single Output LDO, 1.0A, Adj.(1.295 to 5.5V), Low Noise, Fast Transient Response 6-SOT-223 -40 to 85 MB 41C 27#20 14#16 PIN PLUG 1,048,576字×位组织 1,048,576 Words x Bit Organization 1,048,576字×位组织
|
LG Corp. LG, Corp.
|
S25FL001D0FNAI013 S25FL001D0FNFI001 S25FL001D0FNFI |
2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
|
SPANSION[SPANSION]
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VG26S18165CJ-5 VG26S18165CJ-6 VG26V18165CJ-5 VG26V |
1,048,576 x 16 - Bit CMOS EDO DRAM 1,048,576 x 16 - Bit CMOS Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
S29GL01GP S29GL-P12 S29GL01GP11TFIR20 S29GL256P90T |
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology MirrorBit? Flash Family MirrorBit? Flash Family
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SPANSION
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