| PART |
Description |
Maker |
| IC42S32800 IC42S32800-6B IC42S32800-6BG IC42S32800 |
2M x 32 Bit x 4 Banks (256-MBIT) SDRAM
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| KM44C256B KM44C256B-7 KM44C256B-8 KM44C256B-10 |
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Q67100-Q2012 HYB514400BJ-70 HYB514400BJL-60 HYB514 |
1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
|
http://
SIEMENS AG
Siemens Semiconductor G...
|
| TC511402AJ-60 TC511402AP-60 TC511402ASJ-60 TC51140 |
1,048,576 x 4 BIT DYNAMIC RAM
1048576 x 4 BIT DYNAMIC RAM
Darlington Array IC; Transistor Polarity:NPN; Number of Transistors:7; Collector Emitter Voltage, Vceo:1.3V; Package/Case:16-DIP
|
http://
Toshiba Semiconductor
Toshiba Corporation
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HYB314400BJ-50- HYB314400BJ-60 |
1M x 4-Bit Dynamic RAM
1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
|
SIEMENS AG
|
| TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No
4,194,304 WORD x BIT DYNAMIC RAM
4194304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HYB514400BJL-70 HYB514400BJL-60 HYB514400BJL-50 HY |
1 048 576 x 4-Bit Dynamic RAM
4 194 304 x 1-Bit Dynamic RAM
|
Infineon
|
| HYB5117405BT-70 HYB5117405BT-60 HYB5117405BT-50 HY |
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYM322005GS-60 HYM322005GS-50 HYM322005S-60 HYM322 |
2M x 32-Bit Dynamic RAM Module
2M x 32 Bit EDO DRAM Module
2M x 32 Bit DRAM Module
2M x 32-Bit Dynamic RAM Module (Hyper Page Mode - EDO Version)
From old datasheet system
2M x 32-Bit Dynamic RAM Module 2M X 32 EDO DRAM MODULE, 50 ns, SMA72
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HYM72V8010GS-60 HYM72V8010GS-50 HYM72V8000GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8米72位动态随机存储器模块
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| CDP1822 CDP1822CD CDP1822CDX CDP1822CE CDP1822CEX |
256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, PDIP22
256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, CDIP22
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
