| PART |
Description |
Maker |
| PDI-E809 |
GaAlAs High Power IR LED Emitters
|
Advanced Photonix, Inc.
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 125244 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 126244 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 134144 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 126254H |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 128144 |
GaAlAs / GaAlAs LED Chips
|
OSA Opto Light GmbH
|
| OD-880W |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD-880 |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD880F |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD-880W |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode
|
| OD-24X24-C |
HIGH-POWER GaAlAs EMITTER CHIPS
|
OptoDiode Corp
|
