| PART |
Description |
Maker |
| MGFC39V7177A04 MGFC39V7177A |
7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFX36V0717 |
10.7-11.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V7177A04 |
7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RFRX1702 |
GaAs MMIC IQ Downconverter 17.7GHz to 19.7GHz
|
RF Micro Devices
|
| 2SC5488A12 2SC5488A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single SSFP
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| LT5522EUF LT5522EUFTR |
600MHz to 2.7GHz High Signal Level Downconverting Mixer; Package: QFN; No of Pins: 16; Temperature Range: -40°C to 125°C TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC16
400MHz to 2.7GHz High Signal Level Downconverting Mixer
|
Linear Technology, Corp.
|
| LTC5508 LTC5508ESC6 LTC5508ESC6TRM LTC5508ESC6TRMP |
300MHz to 7GHz RF Power Detector with Buffered Output in SC70 Package; Package: SC70; No of Pins: 6; Temperature Range: -40°C to 125°C 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX
300MHz to 7GHz RF Power Detector in SC70
|
Linear Technology, Corp.
|
| LQP03TN12NJ04 AN26032A LQP03TN8N2H04 GRM33B30J104K |
Ultra small , Single Band LNA-IC with Band-limiting filter for 600 MHz Band Applications
|
Panasonic Battery Group
|
| MGFS36E252708 MGFS36E252710 |
2.5-2.7GHz HBT HYBRID IC
|
Mitsubishi Electric Semiconductor
|
| SY87724L08 SY87724LHEI SY87724LHEY SY87724LHG |
3.3V AnyRate MUX/DEMUX Up to 2.7GHz
|
Micrel Semiconductor
|
