| PART |
Description |
Maker |
| K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90
4M x 32Bit x 4 Banks Mobile-SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| ST2764A-25CP ST2764A-18XCP ST2764A-20CP |
Stratix GX FPGA 10K 8-FBGA
Stratix II FPGA 90K FBGA-780 x8存储
Stratix GX FPGA 10K 4-FBGA x8存储
|
Fujitsu, Ltd.
STMicroelectronics N.V.
|
| H5TQ1G83AFPR-G8C H5TQ1G63AFPR-G8C H5TQ1G43AFPR-G8C |
128M X 8 DDR DRAM, PBGA78 HALOGEN FREE, FBGA-78
64M X 16 DDR DRAM, PBGA96 HALOGEN FREE, FBGA-96
256M X 4 DDR DRAM, PBGA78 HALOGEN FREE, FBGA-78
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| V54C3256164VDLF7IPC V54C3256404VDLF7IPC V54C325680 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
|
ProMOS Technologies, Inc.
|
| MBM29PDS322BE11PBT-E1 MBM29PDS322TE11PBT-E1 MBM29P |
2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63 PLASTIC, FBGA-63
2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63 PLASTIC, FBGA-63
|
Spansion, Inc.
|
| K4H560438E-ZLB30 K4H560838E-ZLB30 |
64M X 4 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60
32M X 8 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60
|
Samsung Semiconductor Co., Ltd.
|
| TSC21020F-20MA/883 TSC21020F-20MASB TSC21020F-20MA |
IC CYCLONE III FPGA 16K 484FBGA
IC CYCLONE III FPGA 16K 164 MBGA
IC CYCLONE III FPGA 25K 256 FBGA
IC CYCLONE III FPGA 55K 484FBGA
IC CYCLONE III FPGA 40K 484 UBGA
IC CYCLONE III FPGA 25K 324 FBGA
IC CYCLONE III FPGA 40K 484UBGA
IC CYCLONE III FPGA 40K 324 FBGA
IC CYCLONE III FPGA 40K 780 FBGA
IC CYCLONE III FPGA 40K 484FBGA
IC CYCLONE III FPGA 40K 780FBGA
FPGA, CYCLONE III, 40K LE, 240 PQFP Programmable Logic Type:FPGA; Logic IC function:FPGA; Logic IC family:Cyclone III; Logic IC Base Number:3; I/O lines, No. of:128;
IC CYCLONE III FPGA 25K 144 EQFP
IC CYCLONE III FPGA 16K 256 UBGA
FPGA, CYCLONE III, 40K LE, 324FBGA Programmable Logic Type:FPGA; Logic IC function:FPGA; Logic IC family:Cyclone III; Logic IC Base Number:3; I/O lines, No. of:195;
IC CYCLONE III FPGA 16K 256FBGA 数字信号处理器| 32位|的CMOS | RAD数据通信硬|美巡赛| 223PIN |陶瓷
IC CYCLONE III FPGA 16K 240PQFP
|
TE Connectivity, Ltd.
|
| ST303C04CFL0 ST303C04CFN0 ST303C08CFL0 ST303C08CFN |
Silicon Controlled Rectifier, 1180 A, 1000 V, SCR, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3
MAX II CPLD 1270 LE 256-FBGA 400V 1180A逆变晶闸管采用TO - 200AB（电子北辰）封装
Cyclone II FPGA 35K FBGA-672 800V180A逆变晶闸管采用TO - 200AB（电子北辰）封装
400V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
800V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
1000V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
|
Vishay Semiconductors
TE Connectivity, Ltd.
International Rectifier
|
| UPD29F032203ALF9-A85BY-BS2 UPD29F032203ALF9-A85TY- |
2M X 16 FLASH 3V PROM, 85 ns, PBGA63 11 X 7 MM, FBGA-63
|
HIROSE ELECTRIC Co., Ltd.
|
| CY7C1528V18-167BZC CY7C1528V18-167BZI CY7C1528V18- |
8M X 9 DDR SRAM, 0.5 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
8M X 9 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
72-Mbit DDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
|
