| PART |
Description |
Maker |
| BUV20D BUV20 BUV60 BUV20-D |
Power 50A 125V NPN TO204
SWITCHMODE™ Series NPN Silicon Power Transistor
SWITCHMODE Series NPN Silicon Power Transistor
SITCHMODE Series NPN Silicon Power Transistor
|
ONSEMI[ON Semiconductor]
|
| CP-SNT55W |
Swi tchmode power suppl ies 瑞东tchmode权力suppl载体
|
Electronic Theatre Controls, Inc.
|
| 1N1188A 1N1190A 1N1186A 1N1186 1N1186RA |
400V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
600V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
200V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
200V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
|
International Rectifier
|
| STB40NF20 STW40NF20 |
N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247
|
ST Microelectronics
|
| STP3015L STB3015 STB3015L 6057 |
From old datasheet system
N - CHANNEL 30V - 0.013 - 40A - D 2 PAK/TO-220 STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET -通道30V 0.013欧姆- 40A D2PAK/TO-220 STripFETO的功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| STP40N20 STB40N20 STW40N20 |
N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STRIPFET MOSFET
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
|
| PA52 |
Amplifiers - Apex Linear Op-Amp, 200V, 40A OP-AMP, 10000 uV OFFSET-MAX, 3 MHz BAND WIDTH, MDFM12
|
Cirrus Logic, Inc.
|
| IRF9610S IRF9610STRL IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
CAP 3.9PF 50V /-0.1PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 3.0ohm，身份证\u003d- 1.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF5210 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V Rds(on)=0.06ohm Id=-40A)
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)
|
IRF[International Rectifier]
|
| IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
| NTE6006 NTE6007 NTE6008 NTE6009 NTE6011 NTE6010 |
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
Fast Recovery Rectifier / 40A / 200ns
Fast Recovery Rectifier 40A 200ns
Fast Recovery Rectifier, 40A, 200ns
|
NTE[NTE Electronics]
NTE Electronics, Inc.
|
| IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
|
IRF[International Rectifier]
|
