PART |
Description |
Maker |
MX29F022NBPC-55 MX29F022NTPC-55 MX29F022BPC-55 MX2 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDSO32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDIP32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
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Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
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AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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AM29LV400BT55REC AM29LV400BT70EI AM29LV400BB55REC |
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory 256K X 16 FLASH 3V PROM, 55 ns, PDSO48 IC,FLASH,4MBIT,CMOS,256KX8 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
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Advanced Micro Devices, Inc.
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MX28F2000TQC-12C4 MX28F2000TPC-12C4 MX28F2000TQC-9 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PQCC32
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Macronix International Co., Ltd.
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AT49F002NT-55JC AT49F002NT-55JI AT49F002NT-55PC AT |
2-Megabit 256K x 8 5-volt Only CMOS Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PQCC32 LM48510 Boosted Class D Audio Power Amplifier; Package: LLP; No of Pins: 16 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 2-Megabit 256K x 8 5-volt Only CMOS Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 LM4850 BOOMER Mono 1.5 W / Stereo 300 mW Power Amplifier; Package: TSSOP; No of Pins: 14 LM4858 Boomer ® Audio Power Amplifier Series Mono 1.5 W / Stereo 300mW Power Amplifier; Package: LLP; No of Pins: 14
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Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
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AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k) Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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E28F004BVT80 E28F004BVB80 E28F004BVT60 E28F004BVT1 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Dual-Slot, PCMCIA Analog Power Controller Evaluation Kit for the MAX5943A/B/C/D/E 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO48 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO56
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Intel Corporation Intel Corp. Intel, Corp.
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MBM29LV400BC-70PFTN MBM29LV400BC-90PFTN MBM29LV400 |
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT IC,EEPROM,FLASH,256KX16/512KX8,CMOS,TSSOP,48PIN,PLASTIC
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SPANSION[SPANSION] Fujitsu
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PM29F002T-70JC PM29F002T-90PC PM29F002T-55PC PM29F |
2 Megabit (256K X 8) 5.0 Volt-only CMOS Flash Memory 2兆位56K × 8.0伏,只有闪存的CMOS 2 Megabit (256K X 8) 5.0 Volt-only CMOS Flash Memory 2兆位256K × 8.0伏,只有闪存的CMOS
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PMC-Sierra, Inc.
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EN29SL400T-90TC EN29SL400T-90TCP EN29SL400T-90TI E |
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only
|
Eon Silicon Solution Inc.
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AM29LV102BB-90FEB AM29LV102BB-70FEB AM29LV102BT-12 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位56亩8位).0伏的CMOS只,引导扇区32引脚闪存 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位56亩8位)3.0伏的CMOS只,引导扇区32引脚闪存 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 70 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位).0伏的CMOS只,引导扇区32引脚闪存 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 90 ns, PQCC32
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Advanced Micro Devices, Inc.
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