| PART |
Description |
Maker |
| MX29F004BQC-70 MX29F004BQC-12 MX29F004BQC-90 MX29F |
x8 Flash EEPROM
4M-BIT [512KX8] CMOS FLASH MEMORY 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| PUMA68F4001I-15 PUMA68F4001MB-17 PUMA68F4001M-17 P |
x32 Flash EEPROM Module
1M (64K X 16), 3V, FLASH, VSOP, COM TEMP(FLASH) X32号，闪存EEPROM模块
|
Macronix International Co., Ltd.
|
| S29CD032J0MFAM033 S29CD016J0MQFM130 S29CD016J0PQFM |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
|
Spansion, Inc.
SPANSION LLC
|
| GLS37VF040-70-3C-NHE SST37VF020-70-3C-PHE SST37VF0 |
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
128K X 8 FLASH 2.7V PROM, 70 ns, PDIP32
|
SILICON STORAGE TECHNOLOGY INC
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| AS8F512K32Q1-150_883C AS8F512K32Q1-150_CT AS8F512K |
512K X 32 FLASH 5V PROM MODULE, 90 ns, CPGA66
512K x 32 FLASH FLASH MEMORY ARRAY
|
AUSTIN SEMICONDUCTOR INC
|
| Z8F0423HH005EC Z8F0423HH005SC Z8F0413SH005EC Z8F04 |
IC ENCORE MCU FLASH 4K 20SSOP 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO20
IC ENCORE MCU FLASH 4K 20SOIC 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO20
IC ENCORE MCU FLASH 4K 28SOIC 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO28
IC ENCORE MCU FLASH 1K 20DIP 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDIP20
IC ENCORE MCU FLASH 2K 28SSOP 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO28
IC ENCORE MCU FLASH 8K 28-SSOP 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO28
IC ENCORE MCU FLASH 1K 28SSOP 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO28
|
ZiLOG, Inc.
|
| PALCE20V8-10DMB PALCE20V8-10JC PALCE20V8-10JI PALC |
BBG ECL TRNSLATR DIFF; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
Flash Erasable, Reprogrammable CMOS PAL Device FLASH PLD, 15 ns, QCC28
Flash Erasable, Reprogrammable CMOS PAL Device FLASH PLD, 10 ns, PDIP24
Flash Erasable, Reprogrammable CMOS PAL Device FLASH PLD, 15 ns, CDIP24
Flash Erasable, Reprogrammable CMOS PAL Device FLASH PLD, 25 ns, CDIP24
S-Video Cable Assembly; Connector Type A:Mini-DIN 4 Male; Connector Type B:Mini-DIN 4 Male; Cable Length:50ft; Color:Black; No. of Contacts:4
FlashErasable/ReprogrammableCMOSPALDevice
Flash Erasable/ Reprogrammable CMOS PAL Device
|
Cypress Semiconductor, Corp.
CypressSemiconductor
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| S29NS016J0PBJW003 S29NS064J0LBJW000 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 1M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
|
Spansion, Inc.
SPANSION LLC
|
| LH28F008SCHB-LF12 LH28F008SCT-LF12 LH28F008SCR-LF8 |
1M X 8 FLASH 2.7V PROM, 120 ns, PBGA42 FBGA-42
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 TSOP1-40
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 REVERSE, TSOP1-40
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 REVERSE, TSOP1-40
1M X 8 FLASH 2.7V PROM, 85 ns, PBGA42 FBGA-42
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO44 SOP-44
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 TSOP1-40
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO44 SOP-44
1M X 8 FLASH 5V PROM, 120 ns, PDSO56
512K X 8 FLASH 5V PROM, 60 ns, PDSO44
2M X 8 FLASH 5V PROM, 120 ns, PDSO56
512K X 8 FLASH 5V PROM, 60 ns, PDSO48
256K X 8 FLASH 5V PROM, 80 ns, PDSO32
|
Sharp Electronics, Corp.
SHARP ELECTRONICS CORP
|
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