| PART |
Description |
Maker |
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16S72BDFA-7 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 1207959552位（16,777,21672位）同步动态随机存储器
|
Mitsubishi Electric, Corp.
|
| M6MGB166S2BWG M6MGT166S2BWG |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MH16S72APHB-7 MH16S72APHB-6 MH16S72APHB-8 |
1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| MH16S72DDFA-8 MH16S72DDFA-7 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| M6MGB_T162S2BVP M6MGB E99005_A M6MGB162S2BVP M6MGT |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HM5116100 5116100 |
16,777,216-word ′ 1-bit Dynamic RAM
From old datasheet system
|
hitachi
|
| MH16S72VJB-6 B99037 |
From old datasheet system
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MK32VT1632 MK32VT1632-10YC |
16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK)
|
OKI[OKI electronic componets]
|
| MSM5116100A |
16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI electronic componets
|
| MD51V64405 |
16 /777 /216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
OKI electronic componets
|
