| PART |
Description |
Maker |
| MIC915 MIC915BMM |
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
10000 SYSTEM GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
Dual 135MHz Low-Power Op Amp
|
Micrel Semiconductor,Inc.
|
| ATC18 |
ER 4C 4#4 SKT RECP
Embedded ASIC Memory Cell
The ATC18 Cell-based ASIC (CBIC) family features a comprehensive library of 0.18-micron standard logic and I/O cells designed to operate with a supply voltage of 1.8V /- 0.15V and memory cells compiled to the precise requirements of the d
|
Atmel Corp.
ATMEL Corporation
|
| HER301 HER303 HER302 |
28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
3.0 AMP HIGH EFFICIENCY RECTIFIERS 3.0放大器高效整流二极管
|
Bytes
|
| EPM7032SLC44-10 EPM7128ELC84-20 EPM7128ELC84-15 EP |
MAX 7000 Programmable Logic Device
COMPLEX-EEPLD,128-CELL,10NS PROP DELAY,LDCC,84PIN,PLASTIC
COMPLEX-EEPLD,128-CELL,15NS PROP DELAY,LDCC,84PIN,PLASTIC
COMPLEX-EEPLD,128-CELL,20NS PROP DELAY,LDCC,84PIN,PLASTIC
COMPLEX-EEPLD,32-CELL,10NS PROP DELAY,LDCC,44PIN,PLASTIC
|
N/A
Altera Corp
|
| MIC833 MIC833BM5 |
30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
Comparator and Reference with Adj. Hystersis Advance Information
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| HER208G HER201G HER203G HER204G HER205G HER206G HE |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 高效玻璃钝化整流
HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
|
Micro Commercial Components, Corp.
GOOD-ARK[GOOD-ARK Electronics]
|
| STT02N20 |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
SamHop Microelectronics...
|
| STT03L03 |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
SamHop Microelectronics...
|
| STN1810 |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9437 |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
