| PART |
Description |
Maker |
| M57788LR 57788LR |
400-430MHz, 13.5V, 47W, FM MOBILE RADIO 400 - 430MHz3.5V7W配合，调频移动通信
400-430MHz / 13.5V / 47W / FM MOBILE RADIO
From old datasheet system
MITSUBISHI RF POWER MODULE 400-430MHz, 13.5V, 47W, FM MOBILE RADIO
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M57788L |
MITSUBISHI RF POWER MODULE 400-430MHz, 13.5V, 40W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| RA03M4043MD RA03M4043MD10 |
RoHS Compliance , 400-430MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| M57716M 57716M M57716 |
Silicon Bipolar Power Amplifier for 410-430 MHz 13W Digital Mobile
Silicon Biporlar Power Amplifier for 410-430MHz 13W Digital Mobile
From old datasheet system
Silicon Bipolar Power Amplifier for 410-430MHz 13W Digital Mobile
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| SPMR527M10 SPMR527 SPMR527B04 SPMR527B10 SPMR527F0 |
320/400 Amps 100/30 Volts 3 PHASE BRIDGE POWER MODULE
|
SSDI[Solid States Devices, Inc]
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| APT4014BVFR APT4014SVFR APT4014BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 28; RDS(on) (Ohms): 0.14; BVDSS (V): 400; 28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
|
Microsemi, Corp.
Advanced Power Technology
http://
|
| DSS-113PIN DS-113PIN DSS-113 DS-113 |
Two-Way Power Divider, 400 KHz - 400 MHz
|
Tyco Electronics
|
| RA07M3843M RA07M3843M-101 |
ROHS COMPLIANCE , 378-430MHZ 7W 7.2V, 2STAGE AMP. FOR PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| IRF320-323 IRF321 IRF322 IRF323 IRF320 IRF720 IRF7 |
N-Channel Power MOSFETs, 3.0 A, 350-400 V N沟道功率MOSFET.0甲，350-400 V
TRI N PLUG M 0-48
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
