| PART |
Description |
Maker |
| BM-10EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
5X7 DOT MATRIX DISPLAY, HIGH EFFICIENCY RED/YELLOW GREEN, 30.48 mm
|
BRIGHT LED ELECTRONICS CORP
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| VTA3121 |
Photo Transistor Chips
|
Perkin Elmer
|
| SSB-COB13340SYW-B |
SINGLE COLOR DISPLAY CLUSTER, SUPER YELLOW, 133 mm
133mm x 40mm V.A. SUPER YELLOW LED BACKLIGHT CHIPS ON BOARD, 132 CHIPS, 4.2V 660mA
133mm x 40mm V.A. SUPER YELLOW LED BACKLIGHT, CHIPS ON BOARD, 132 CHIPS, 4.2V 660mA
|
ETC
LUMEX INC.
List of Unclassifed Manufacturers
|
| BM-20EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| CF010_06 CF003-01 CF005-01 CF010 CF010-01 |
Broadband Power GaAs MESFET Chips
|
MIMIX[Mimix Broadband]
|
| SSB-COB7248GW |
72mm x 48mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 84 CHIPS, 565mm REEN CHIPS, 4.2V 420mA
72mm x 48mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 84 chips 565NM green
|
http://
ETC
|
| BAL-NRF01D313 |
50 ohm balun transformer for 2G45 ISM matched Nordic Semiconductor chips with ultralow power transceivers
|
STMicroelectronics
|
| BUW36 BUY69A BUY69B BUX48 BUX80 BDX87 BDX88 BDW51 |
Leaded Power Transistor Darlington
Power Transistors 15 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-3
INDUCTOR PWR UNSHIELD 470UH SMT
Certification- 5.2kVDC Isolation- Power Sharing- Pin Compatible with RH & RK Series, SIP DC-DC Converters- UL94V-0 Package M
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| IPI25N06S3L-22 IPB25N06S3L-22 IPP25N06S3L-22 SP000 |
OptiMOS?-T Power-Transistor
OPTIMOS⑶-T POWER-TRANSISTOR
OptiMOS㈢-T Power-Transistor
OptiMOST Power-Transistor
|
Infineon Technologies AG
|
| IPI25N06S3-25 IPB25N06S3-25 SP0000-88000 SP0000-88 |
OptiMOS?-T Power-Transistor
OPTIMOS⑶-T POWER-TRANSISTOR
OptiMOS㈢-T Power-Transistor
OptiMOST Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| SIDC01D60SIC2SAWN SIDC01D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 4A die sawn
Diodes - HV Chips - 600V, 4A die unsawn
|
Infineon
|
