| PART |
Description |
Maker |
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
| GS74108AJ-8 GS74108ATP-10 GS74108ATP-10I GS74108AT |
512K x 8 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| GS74108ATJ |
512K x 8 4Mb Asynchronous SRAM
|
GSI Technology
|
| GS74117AX-12 GS74117AX-8 GS74117AX-7I GS74117AX-10 |
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 8 ns, PBGA48
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 7 ns, PBGA48
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 10 ns, PBGA48
|
SRAM
GSI Technology, Inc.
|
| N04L163WC2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N04L163WC1C |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N04M163WL1A |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM
4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp)
4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位（为512k × 8），5V的异步SRAM
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| GS71024T-8T GS71024T-10T GS71024T-10IT GS71024U-10 |
8ns 64K x 24 1.5Mb asynchronous SRAM
1.5Mb4K x 24Bit）Asynchronous SRAM(1.5M位（64K x 24位）异步静态RAM) 即：1.5MB4K的x 24位）异步SRAM50万位4K的24位）异步静态RAM）的
x24 SRAM x24的SRAM
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| GS76024B-15I GS76024B-10 GS76024B-10I GS76024B-12 |
6Mb56K x 24Bit）Asynchronous SRAM(6M位（256K x 24位）异步静态RAM)
256K x 24 6Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
