PART |
Description |
Maker |
N04L163WC2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
N04L1618C2AB2-70I N04L1618C2A N04L1618C2AB N04L161 |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
http:// NANOAMP[NanoAmp Solutions, Inc.]
|
N04L63W1AB27I N04L63W1AB27IT N04L63W1AT27I N04L63W |
4 Mb Ultra-Low Power Asynchronous CMOS SRAM 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit
|
ON Semiconductor
|
GS84032AB-100 GS84032AB-100I GS84032AB-150 GS84032 |
100MHz 12ns 128K x 32 4Mb sync burst SRAM 150MHz 10ns 128K x 32 4Mb sync burst SRAM 166MHz 8.5ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
N04L1630C2BT2 N04L1630C2B N04L1630C2BB2 N04L1630C2 |
256K X 16 STANDARD SRAM, 70 ns, PDSO44 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM
|
ON SEMICONDUCTOR AMI[AMI SEMICONDUCTOR]
|
M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM 4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp) 4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位(为512k × 8),5V的异步SRAM
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
|
GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM 180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
M68AF127BL55MC6 M68AF127BMC M68AF127B M68AF127BB M |
1Mbit 128K x8, 5V Asynchronous SRAM 1Mbit28K的8V的异步SRAM AML22 Series, Electronic Control Pushbutton, Square, Standard Bezel, Lighted, 1 LED, DPDT, Momentary Action, Snap in panel mount 1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM 2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (256-kword X 16-bit) From old datasheet system
|
http:// RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
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