| PART |
Description |
Maker |
| ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10 |
3.3V In-System Programmable High Density SuperFAST?PLD
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44
CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100
CRYSTAL 20.0 MHZ 20PF SMD
RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM
3.3V In-System Programmable High Density SuperFAST PLD
3.3V In-System Programmable High Density SuperFAST⑩ PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
280 MHz 3.3V in-system prommable superFAST high density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE
FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
High Voltage,High Density Fast Recovery Rectifier(反向电压4000V，温55℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压6000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压12000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压2000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压10000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
| STP38N06 3645 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| LTV819-2M LTV819-1M LTV819-1S LTV-829S-TA1 LTV-819 |
High Density Mounting Type Photocoupler 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
High Density Mounting Type Photocoupler(484.24 k) 高密度安装类型光电耦合84.24十一
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
|
Lite-On Technology, Corp.
LITE-ON ELECTRONICS INC
|
| STD20N06 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N-CHANNEL MOSFET
|
SamHop Microelectronics Corp.
STMicroelectronics
ST Microelectronics
|
| TXC04222 |
28-Channel Dual Bus High Density Mapper
|
Transwitch
|
| IDT82P2916 |
16-Channel High-Density T1/E1/J1 Line Interface Unit
|
Integrated Device Technology
|
| PM5366-PI |
HIGH DENSITY 84/63 CHANNEL VT/TU MAPPER AND M13 MULTIPLEXER
|
PMC-Sierra, Inc.
|
| MSAFA1N100P3 MSC1411 |
N-Channel enhancement mode high density
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
| ISPLSI2032VL-135LT44I ISPLSI2096VL ISPLSI2096VL-10 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8 ns, PQFP128
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44
|
LATTICE[Lattice Semiconductor]
LATTICE [Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| AN82 |
HIGH-DENSITY MULTI CHANNEL OC-48 LAYOUT GUIDELINES FOR THE Si5100 AND Si5110
|
Silicon Laboratories Inc.
|
