| PART |
Description |
Maker |
| NE851M03 NE851M03-T1-A |
NECs NPN SILICON TRANSISTOR
|
California Eastern Labs
|
| NE68139R-T1 NE68139-T1 NE68133-T1 NE68118-T1 NE681 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC[NEC]
|
| NE66719-T1 NE66719 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2021M16-T3-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Micro Devices Corporation
|
| NE46134-T1-AZ NE46100 NE46134-T1 NE46134-T1-QS-AZ |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
|
Duracell
California Eastern Labs
|
| NE681M13-T3-A NE681M13 NE681M13-A |
NECs NP SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG210719 NESG210719-T1 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| 2N6132 2N6101 2N6491 2N6486 2N6487 2N6489 2N6099 2 |
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
(2N6130 - 2N6134) NPN SILICON TRANSISTOR
Leaded Power Transistor General Purpose
Leaded Power Transistor Darlington
|
http://
ON Semiconductor
Central Semiconductor Corp.
Advanced Semiconductor
CENTRAL[Central Semiconductor Corp]
Central Semiconductor C...
|
| 2SD414 2SD415 2SB548 2SB549 2SD414Q 2SD414Q-AZ |
800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
(2SB548) PNP/NPN Silicon Epitaxial Transistor
|
NEC[NEC]
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
